The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP523−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP523−4 provides four isolated channels per package.
· Current transfer ratio: 500% (min.) (IF = 1 mA)
· Isolation voltage: 2500 Vrms (min.)
· Collector−emitter voltage: 55 V (min.)
· Leakage current: 10μA (max.) (Ta = 85°C)
· UL recognized: UL1577, file no. E67349
| Brand Product | Generic |
|---|---|
| GTIN | 1, |
| IC type | N/A |
| Is Featured | No |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |