TLP291

"TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler. Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ËšC) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. ● Collector-Emitter Voltage : 80 V (min) ● Current Transfer Ratio : 50% (min) Rank GB : 100% (min) ● Isolation Voltage : 3750 Vrms (min) ● Operation temperature: -55 to 110 ËšC ● UL recognized : UL1577, File No. E67349 ● cUL approved : CSA Component Acceptance Service No.5A, File No. 67349 ● SEMKO aprroved: EN 60065: 2002, Approved no. 1200315 EN 60950-1: 2001, EN 60335-1: 2002, Approved no. 1200315 ● BSI approved : BS EN 60065: 2002, Approved no. 9036 : BS EN 60950-1: 2006, Approved no. 9037 ● Option (V4) VDE approved: EN 60747-5-5 Certificate, No. 40009347 Maximum operating insulation voltage: 707 Vpk Highest permissible over-voltage: 6000 Vpk (Note) When a EN 60747-5-5 approved type is needed, please designate the “Option(V4)” Construction Mechanical Rating Creepage distance:5.0mm(min) Clearance:5.0mm(min) Insultion thickness:0.4mm(min)   "