Specifications:

Maximum peak gate power (PGM): 1.3 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 7.8 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.3 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 4 mA
Package: TO‑220