Specifications:

Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 2 A
Non repetitive surge peak on-state current (ITSM): 8 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 58 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 10 mA
Package: TO‑220F