Specifications :

Maximum peak gate power (PGM): 35 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 16 A
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 300 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 30 mA
Holding current (IH): 40 mA"