Specifications :

High Power Gain: Gpe ≥ 12dB, PO = 16W, f = 27MHz
High Reliability
Collector−Base Voltage, VCBO : 60V
Collector−Emitter Voltage (RBE = ∞), VCEO : 25V
Emitter−Base Voltage, VEBO : 5V
Collector Current, IC : 6A
Collector Dissipation, PC
TA = 25°C : 1.7W
TC = 25°C : 20W
Operating Junction Temperature, TJ : 150°C
Storage Temperature Range, Tstg : −55° to 150°C
Thermal Resistance, Junction−to−Ambient, RthJA : 73.5°C/W
Thermal Resistance, Junction−to−Case, RthJC : 6.25°C/W