Specifications:

Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-16
Transistor Polarity: N-Channel, P-Channel
Number of Channels: 6 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 3 A
Rds On - Drain-Source Resistance: 125 mOhms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Configuration: Hexa
Fall Time: 8 ns, 5 ns
Height: 1.5 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 21 ns, 13 ns
Transistor Type: 3 N-Channel, 3 P-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 9 ns, 10 ns
Width: 4 mm
Unit Weight: 666 mg