MPQ3904 - DIP

The MPQ3904 is a transistor array consisting of 4 NPN bipolar junction transistors (BJTs) in a quad configuration. It is designed for through-hole mounting and comes in a 14-DIP package with a lead spacing of 0.300 inches (7.62mm). The package type is TO-116.

Each NPN transistor within the MPQ3904 array has the following specifications:

Maximum collector current (Ic): 200mA, indicating the maximum current that can flow through the collector terminal.
Maximum collector-emitter breakdown voltage: 40V, representing the maximum voltage that can be applied between the collector and emitter terminals.
Collector-emitter saturation voltage (Vce Saturation): 200mV at a base current (Ib) of 1mA and a collector current (Ic) of 10mA. This indicates the voltage drop across the transistor when it is in the saturated state.
Maximum collector cutoff current (ICBO): 50nA, indicating the maximum leakage current that flows between the collector and emitter terminals when the transistor is reverse biased.
Minimum DC current gain (hFE): 75 at a collector current (Ic) of 10mA and a collector-emitter voltage (Vce) of 1V. This value represents the amplification factor of the transistor.
Maximum power dissipation: 500mW, indicating the maximum power that can be handled by the transistor without exceeding its specified temperature limits.
Transition frequency: 250MHz, representing the maximum frequency at which the transistor can operate effectively.
Operating temperature range: -65°C to 150°C (TJ), specifying the temperature limits within which the transistor can operate reliably.
The MPQ3904 transistor array is suitable for various ap