MPQ2907 - DIP

The MPQ2907 is a transistor array consisting of 4 PNP bipolar junction transistors (BJTs) in a quad configuration. It is designed for through-hole mounting and comes in a 14-DIP package with a lead spacing of 0.300 inches (7.62mm). The package type is TO-116.

Each PNP transistor within the MPQ2907 array has the following specifications:

Maximum collector current (Ic): 600mA, indicating the maximum current that can flow through the collector terminal.
Maximum collector-emitter breakdown voltage: 40V, representing the maximum voltage that can be applied between the collector and emitter terminals.
Collector-emitter saturation voltage (Vce Saturation): 1.6V at a base current (Ib) of 30mA and a collector current (Ic) of 300mA. This indicates the voltage drop across the transistor when it is in the saturated state.
Maximum collector cutoff current (ICBO): 50nA, indicating the maximum leakage current that flows between the collector and emitter terminals when the transistor is reverse biased.
Minimum DC current gain (hFE): 50 at a collector current (Ic) of 300mA and a collector-emitter voltage (Vce) of 10V. This value represents the amplification factor of the transistor.
Maximum power dissipation: 650mW, indicating the maximum power that can be handled by the transistor without exceeding its specified temperature limits.
Transition frequency: 200MHz, representing the maximum frequency at which the transistor can operate effectively.
Operating temperature range: -65°C to 150°C (TJ), specifying the temperature limits within which the transistor can operate reliably.
The MPQ2907 transistor array is suitable for various applications, including amplification, switching, and signal processing in electronic circuits.