MGD622 TO-3P

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SKU
SDTN0093

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Specifications:


Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 90
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 40
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 90
Collector Capacity (Cc), typ, pF: 80
Total Gate Charge (Qg), typ, nC: 40 

More Information
Brand Product Generic
GTIN 1,
Max Voltage N/A
Is Featured No
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

2 Weeks

 

MGD622 TO-3P

AED 77.85