Specifications:

Type: IGBT Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 539
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 40
Collector Capacity (Cc), typ, pF: 430
Total Gate Charge (Qg), typ, nC: 27.4