"Specifications:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: 4-HVMDIP
Package / Case: 4-DIP (0.300"", 7.62mm)

"