IRFD110 - DIP

The IRFD110 is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) in a 4-pin dual in-line package (DIP). It is designed for use in various electronic applications as a high-voltage, high-current switching device.

The IRFD110 features a drain-to-source voltage (Vdss) rating of 100V, allowing it to handle voltages up to this level. It has a continuous drain current (Id) of 1A at a temperature of 25°C (Ta), making it suitable for applications requiring moderate current handling.

The MOSFET is designed to be driven with a maximum gate voltage of 10V. It has a maximum drain-source on-resistance (Rds On) of 540mOhm at a drain current (Id) of 600mA and a gate-source voltage (Vgs) of 10V. This low on-resistance ensures efficient power transfer and minimal voltage drop across the device.

The gate threshold voltage (Vgs(th)) is specified as a maximum of 4V at an drain current (Id) of 250µA. It has a gate charge (Qg) of 8.3 nC at a gate-source voltage (Vgs) of 10V, indicating the amount of charge required to switch the MOSFET on and off efficiently.

The IRFD110 has a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in drive voltage requirements. It exhibits an input capacitance (Ciss) of 180 pF at a drain-source voltage (Vds) of 25V, which indicates the capacitive load the device presents to the driving circuitry.

The MOSFET is designed for through-hole mounting, and it comes in a 4-HVMDIP package, also known as 4-DIP, with a lead spacing of 0.300 inches (7.62 mm).

With a maximum power dissipation of 1.3W at the specified temperature range of -55°C to 175°C (TJ), the IRFD110 can handle moderate power levels while operating reliably.

Overall, the IRFD110 is a N-channel MOSFET designed for high-voltage switching applications. Its features include a 100V drain-to-source voltage, 1A continuous drain current, low on-resistance, and a wide operating temperature range, making it suitable for various electronic designs.