Specifications:

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 100 mOhms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 175 C
Pd - Power Dissipation: 100 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 6.3 ns
Height: 15.65 mm
Length: 10 mm