Specifications:

Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 14 mOhms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 70 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 23 ns
Forward Transconductance - Min: 39 S
Height: 1.75 mm
Length: 4.9 mm
Product Type: MOSFET
Rise Time: 10 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 16 ns
Width: 3.9 mm
Unit Weight: 130 mg