Specifications:

Collector-emitter voltage VCE 1200 V
Collector-gate voltage RGE = 20 kΩ VCGR= 1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C 8a
TC = 110 °C 22a
Pulsed collector current, tp = 1 ms
TC = 25 °C ICpuls 16
TC = 110 °C ICpuls 44
Avalanche energy, single pulse
IC = 8 A, VCC = 50 V, RGE = 25 Ω
L = 300 µH, Tj = 25 °C
EAS10mJ
Power dissipation
TC = 25 °C
Ptot 125W
Chip or operating temperature Tj -55 ... 150 °C
Storage temperature Tstg -55 ... 150