Specifications:

FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75 V
Current - Continuous Drain (Id) @ 25°C : 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.8mOhm @ 110A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 260 nC @ 10 V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7580 pF @ 25 V
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)