Specifications:

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Vgs (Max) ±20V
Power Dissipation (Max) 170W (Tc)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 66A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount