Specifications:

Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 167
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 21
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.45
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8(typ)
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 15
Total Gate Charge (Qg), typ, nC: 53
Package: TO247