Specification:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 1.87 Ohm
| Brand Product | Generic |
|---|---|
| GTIN | 1, |
| Max Voltage | N/A |
| Is Featured | No |
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|
Stock |
Shipping Method |
ETA |
Cost |
|
|
Available |
Self Pickup |
1 Day |
Free |
|
|
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
|
|
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
|
|
pre-order |
General |
2 Weeks |