Specifications:
Type: IGBT Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 82
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 3
Maximum G-E Threshold Voltag |VGE(th)|, V: 8.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 600
Collector Capacity (Cc), typ, pF: 650
Package: TO3PL
| Brand Product | Generic |
|---|---|
| GTIN | 1, |
| Max Voltage | N/A |
| Is Featured | No |
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|
Stock |
Shipping Method |
ETA |
Cost |
|
|
Available |
Self Pickup |
1 Day |
Free |
|
|
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
|
|
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |